[V@Ge8As4]3− and [Nb@Ge8As6]3−: encapsulation of electron-poor transition metal atoms
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چکیده
منابع مشابه
Stabilization of Si-based cage clusters and nanotubes by encapsulation of transition metal atoms
The encapsulation of metal atoms within Si-based cage clusters leads to stable metal-encapsulated Si cage clusters (Si-cc). The present work investigates the effect of encapsulation of transition metal atoms (TMAs). We show that the filling factor of the d-band of the TMA is the dominant factor determining the structural configuration of the Si-cc. This results in a contrasting bonding and magn...
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ژورنال
عنوان ژورنال: Chemical Communications
سال: 2015
ISSN: 1359-7345,1364-548X
DOI: 10.1039/c4cc10086g